Abstract
Nd-doped gadolinium vanadate (Nd:GdVO 4) films have been grown on La 3Ga 5SiO 14 (LGS) and sapphire substrates by pulsed laser deposition for the purpose of fabricating diode-pumped waveguide lasers. Films were grown over a range of temperatures from 600 to 700 °C in the presence of an oxygen pressure between 2 and 20 Pa. Films were characterized by X-ray diffraction, atomic force microscopy, and prism coupling method. Nd:GdVO 4 films on different substrates show preferential growth along (2 0 0) with smooth surface. However, films fabricated on sapphire substrates have better crystallization quality compared with that on La 3Ga 5SiO 14 (LGS) substrates according to the X-ray analysis. Films with sharper dips were observed on sapphire substrates in comparison with that on LGS substrates, which means a good confinement of the light in the corresponding mode.
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