Nd-doped ZnO films grown on c-cut sapphire by pulsed-electron beam deposition under oblique incidence

Abstract

Nd-doped ZnO thin films were grown by pulsed-electron beam deposition (PED) on c-cut sapphire substrates under oblique angle incidence, at 10-2 mbar oxygen pressure and for a substrate temperature of 500 °C. The films were smooth, compact and constituted with columnar grains inclined at about 17°±4° from the normal to the substrate surface. From X-ray diffraction and transmission electron microscopy experiments, it was found that the wurtzite phase of Nd-doped ZnO thin films is observed with the c-axis inclined around 35° with respect to the normal axis of the substrate, with a three-fold azimuthal symmetry. Epitaxial relationships between Nd-doped ZnO films and sapphire substrate were determined from the asymmetric X-ray diffraction and are presented compared with those obtained for the films grown by non-oblique PED. The tilt of the ZnO c-axis has been explained by the epitaxy of the (2 2 9) ZnO plane on the (0 0 l) sapphire plane, such particular epitaxial growth having never been reported previously.