Abstract
ABSTRACTMOSFETs built in a thin layer of as-deposited, small-grain LPCVD polysilicon offer an attractive alternative to the beam recrystallized SOI MOSFETs because of its simple process and low cost. The inherently inferior performance of polysilicon MOSFET can be improved by the grain boundary passivation in hydrogen plasma. The device characteristics of n-channel and p-channel polysilicon MOSFETs are compared before and after the hydrogen passivation. Dramatic improve-ment of drive current and curtailment of leakage current has been observed after the passivation. The anomalous leakage current has been observed and is attributed to the soft breakdown of the drain junction.
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