Abstract
Integration of superconducting devices on photonic platforms opens up a wide range of functionalities and applications. We report on NbTiN thin films deposited on SiO2, Si3N4, GaAs, LiNbO3, and AlN as well as on a monolayer of hexagonal boron nitride, using a universal reactive co-sputtering recipe. The morphology and the superconducting properties of the NbTiN thin films with a thickness of 10 nm were characterized by atomic force microscopy and electrical transport measurements. Superconducting strip photon detectors were fabricated using a design suitable for waveguide integration and compared in terms of their internal quantum efficiency and detection pulse kinetics. Our results show well-comparable performances for detectors integrated on different platforms, while also demonstrating that reactive co-sputter deposition of NbTiN at room temperature provides a robust method for realizing superconducting devices on various materials.
Highlights
We report on NbTiN thin films deposited on SiO2, Si3N4, gallium arsenide (GaAs), LiNbO3, and aluminum nitride (AlN) as well as on a monolayer of hexagonal boron nitride, using a universal reactive co-sputtering recipe
In this Letter, we show the integration of NbTiN-based superconducting strip photon detectors1 (SSPDs) devices on photonic and monolayer two-dimensional materials using a universal reactive co-sputtering process at room temperature
SSPDs were demonstrated on planar substrates,[18,19] whereas superconducting transition-edge sensors were realized on titanium in-diffused waveguides.[20]
Summary
We report on NbTiN thin films deposited on SiO2, Si3N4, GaAs, LiNbO3, and AlN as well as on a monolayer of hexagonal boron nitride, using a universal reactive co-sputtering recipe. Our results show well-comparable performances for detectors integrated on different platforms, while demonstrating that reactive cosputter deposition of NbTiN at room temperature provides a robust method for realizing superconducting devices on various materials.
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