NBTI of Ge pMOSFETs: Understanding defects and enabling lifetime prediction

J Ma,B Kaczer,W Zhang,J F Zhang,G Groeseneken,B Benbakhti,J Franco,Z Ji,J Mitard

doi:10.1109/iedm.2014.7047166

NBTI of Ge pMOSFETs: Understanding defects and enabling lifetime prediction

J Ma, B Kaczer + Show 7 more

Open Access

https://doi.org/10.1109/iedm.2014.7047166

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Publication Date: Dec 1, 2014

Citations: 5

Affiliation: Liverpool John Moores University, IMEC

#Ge Devices #Si Devices + Show 6 more

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Abstract

Conventional lifetime prediction method developed for Si is inapplicable to Ge devices. This work demonstrates that the defects are different in Ge and Si devices. Based on the investigation of defect difference, for the first time, a method is developed for Ge devices to restore the power law for NBTI kinetics, enabling lifetime prediction. This method is applicable for both GeO<inf>2</inf>/Ge and Sicap/Ge devices, assisting in further Ge process/device optimization.

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