Abstract
We developed a technique for fabricating (100)-oriented NbN thin films on Si (100) wafers by dc magnetron sputtering using TiN as a buffer layer. The lattice constant of the TiN buffer layer measured using X-ray diffraction was 0.4242 nm, which is relatively close to the NbN lattice constant of 0.446 nm. Therefore, NbN on the TiN buffer layer was epitaxially grown along the (100) direction. The junctions consisted of epitaxial NbN/AlN/NbN tunnel junctions using a TiN buffer layer fabricated on single-crystal Si (100) substrates. The NbN/AlN/NbN trilayer with the TiN buffer layer exhibited a single-crystal structure with a (200) orientation without other orientations. The gap voltage and the ratio of R sg /R N were approximately 4.9 mV and 100, respectively, for a junctions size of 1.4 × 1.4 μm 2 and J C = 8 A/cm 2 . Here, R sg is the gap resistance at 4 mV, and R N is the junction resistance at 10 mV. These results suggest that the NbN films using the TiN buffer technique offers significant promise for applications in several superconducting devices.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
