Abstract

Nb doped TiO 2 (TNO) is a promising transparent conducting oxide suitable for many applications such as in solar cells, OLEDs, LEDs, FPDs, touch panels, etc. TNO thin film was deposited on an unheated glass substrate by pulsed direct current (DC) magnetron co-sputtering. After annealing in a vacuum ( -6 Torr) at 370° for 10 minutes, the film crystallized into a polycrystalline anatase TiO 2 structure, the resistivity decreased to 4.5×10 -4 Ω-cm and the average transmittance increased to above 70% in the visible light region. The influence of annealing on the TNO amorphous-to-anatase phase transition, decrease in the resistivity and increase in the average transmittance will be discussed.

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