Abstract
The charge-trapping properties of Gd2O3 with different Nb doping levels are investigated using an Al/Al2O3/Gd2O3/SiO2/Si structure. Compared with the memory device with pure Gd2O3, the one with lightly Nb-doped Gd2O3 shows better charge-trapping characteristics, including higher programming speed (6.5 V at +12 V programming voltage for 10 ms) and better retention property (92% retained charge at 85 °C after 104 s), due to its higher trapping efficiency that resulted from higher trap density and suppressed formation of a silicate interlayer at the Gd2O3/SiO2 interface induced by the Nb doping. Moreover, the one with heavily Nb-doped Gd2O3 shows improvement in erasing behavior but worse retention and lower programming speed than the one with lightly Nb-doped Gd2O3. Further analysis reveals that the Nb-doping level determines the type of dominant trap in the Nb-doped Gd2O3, thus leading to different charge-loss mechanisms and charge-trapping characteristics.
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