Abstract
The authors describe their fabrication process of Nb-Al oxide/Nb tunnel junctions with integrated filter structure. The process includes the lift-off stencil technique and liquid anodization. The quality of the junctions with areas down to about 1 mu m2 is discussed and the trilayers are analysed by anodization spectroscopy. The occurrence of proximity effect structures for trilayers with thick (160 AA) Al films and for trilayers with poor anodization profiles is demonstrated. Finally the mixer performance of a two-junction array is outlined in the range around 100 GHz.
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