Abstract
Onto a double layer, which is made of a Si substrate ( ρ> 1000 Ω·cm ) and a SiO<sub>2</sub> layer 100 nm thick on top of it, a Nb<sub>5</sub>N<sub>6</sub> thin film microbridge is deposited and integrated with an aluminum bow-tie planar antenna. With a SiO<sub>2</sub> air-bridge further fabricated underneath the microbridge and operated at room temperature, such a combination behaves very well as a bolometer for detecting signals at 100 GHz, thanks to a temperature coefficient of resistance (TCR) as high as -0.7% K<sup>-1</sup> of the Nb<sub>5</sub>N<sub>6</sub> thin film. According to our estimations, the best attainable electrical responsivity of the bolometer is about -400 V/W at a current bias of 0.4 mA. The electrical noise equivalent power (NEP) is 6.9x10<sup>-11</sup> W/Hz<sup>1/2</sup> for a modulation frequency at 300 Hz and 9.8x10<sup>-12</sup> W/Hz<sup>1/2</sup> for a modulation frequency above 10 kHz respectively, which are better than those of commercial products (such as Golay cell and Schottky diode detectors). A quasi-optical receiver based on such a bolometer is constructed and measured.
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