Abstract
Si and nitrogen dangling bond defects in amorphous silicon nitride a-SIN x :H are most stable in their charged, diamagnetic states. Excitation to their paramagnetic states is found to occur by both charge conversion of Si defects or N defects or by charge transfer between Si and N defects. The stability of charged defects is modelled in terms of potential fluctuations whose magnitude exceeds their positive correlation energy.
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