Abstract
We have carried out a detailed experimental investigation of the trap parameters - trap energy, trap density, and hole capture cross-section - in a large number of p-Si/SiO2/HfO2/TaN MOS capacitors fabricated on wafers with graded SiO2 layer, and of the flat-band voltage, using a newly developed admittance spectroscopy technique, which yields accurate values of the surface potential and the flat-band voltage, and makes use of the measured conductance to obtain accurate values of the trap parameters. The correlation between the trap density and the flat-band voltage has been analyzed.
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