Abstract

The behavior of the electrical resistivity and magnetoresistance of lanthanum hexaboride with isolated (∼1%) Ce or Ho magnetic impurities has been studied. It has been shown that the low-temperature growth of the resistivity is characteristic of the weak localization regime for charge carriers rather than of the Kondo effect. The negative magnetoresistance observed in CexLa1 − xB6 and HoxLa1 − xB6 at liquid helium temperatures also cannot be interpreted in terms of the Kondo model and corresponds to the formation of many-body states of a spin-polaron type near magnetic rare-earth ions in LaB6.

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