Abstract

Abstract A study of the a.c. conductivity of the Pb-modified amorphous ambipolar semiconductors (PbS)X(GeS)0.7-x(GeS)0.3 and Ge42S58 in the frequency range 100 to 10kHz and in the temperature span 180K–440K has been undertaken for the first time. The a.c. conductivity is found to be proportional to ωs. The temperature dependence of σa.c(ω) and the parameter s is reasonably interpreted by the correlated barrier hopping model (CBH). The analysis of the results reveals that the electronic conduction in Ge42S58 takes place via single-polaron hopping in the whole temperature range of study. Addition of Pb impurity induces new types of defects (C−, Pb2+) which contribute predominantly to the single-polaron hopping process at higher temperature (>330K), but the conduction at lower temperature (<330K) is of bipolaron type in the compositions containing Pb.

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