Abstract
In this paper, the nature and location of hot carrier induced defects is studied for N-channel LDMOS (Laterally Diffused MOS) transistors. These devices are used in wireless base stations and typically operate under high drain bias of 25–30 V, making them highly susceptible to hot carrier injection. In this work, the improvement in hot carrier induced degradation by means of a dummy gate is presented. Using the charge pumping technique, it is demonstrated that, (1) significant electron trapping in the LDD region occurs for devices without a dummy gate in contrast to devices with a dummy gate. (2) For devices with a dummy gate interface traps are preferentially generated in the LDD region.
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