Abstract
Anodic and cathodic processes for rf and dc excited plasmas of silane gas differ in the relative role of charged and neutral radical species. By studying the thickness distribution of films deposited on substrates immersed in the plasma, the relative importance of these species as contributors to the film thickness is assessed. In addition, the impact of the different deposition processes on the spin density in the deposited hydrogenated amorphous silicon films and a key photoelectronic property, the hole range, is discussed.
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