Abstract

Natively textured ZnO layers for the application as front electrode material in amorphous silicon pin solar cells have been deposited by expanding thermal plasma chemical vapor deposition. Films deposited in the temperature regime from 150 to 350/spl deg/C at a rate between 0.65 and 0.75 nm/s have been characterized with respect to their optical, electrical and structural properties. Results comparable to Asahi U-type SnO/sub 2/:F have been obtained for these layers. The first solar cells on ZnO, which was deposited at 250/spl deg/C and 350/spl deg/C, show an efficiency approaching 10%, only slightly lower than on Asahi U-type SnO/sub 2/:F.

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