Abstract
High-energy particle irradiation has been shown previously to be a method for n-type doping of InN. Here we irradiated InN with H + and He + particles to study the dependence of the electron mobility on electron concentrations varying from mid-10 18 to mid-10 20 cm −3. We find that the electron mobility is limited by scattering from the ionized defects created by irradiation, resulting in a strong correlation between mobility and electron concentration. Furthermore, our calculations suggest that the radiation-induced defects may be triply charged donors.
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