Abstract
The native point defects structure in ZnS films obtained by the close-spaced vacuum sublimation technique at different growth conditions has been studied. The energy levels in the band gap were studied by the photoluminescence and injection spectroscopy under monopolar injection conditions. Luminescence spectra were recorded using electrical fluorometer in the range of wavelengths λ=360–710 nm under liquid-helium temperature. The point defects structure in the ZnS films was calculated using quasi-chemical formalism. Besides, in order to study the point defects dark voltage–current characteristics using the theory of space charge limited currents was investigated. As a result, dependences of concentration of free carriers and native point defects on technological growth conditions of ZnS films have been received. In the band gap of ZnS a range of localized states with different energy were revealed.
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