Abstract
We developed mercury-free narrow-band deep-ultraviolet luminescence devices which were accomplished by performing field-emission excitation of Al1−xGdxN. The narrow band emission is a typical feature of the intra-orbital electron transition in the rare-earth Gd3+ ions. AlN, GdN and Al1−xGdxN thin films were grown on fused silica substrates by using the reactive sputtering technique. A resolution limited, narrow band luminescence line from Gd3+ ions has been observed around 315 nm. Detailed luminescence characteristics depending on the GdN mole fraction and the growth temperature have been investigated.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
More From: IOP Conference Series: Materials Science and Engineering
Disclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.