Narrowband Notch Filters with Composite Nanostructure Layers on a GaN-Based Light Emitting Diode

Abstract

In this paper, novel active narrowband notch filters with triple-layer composite nanostructures on a GaN-based LED are obtained by mainly adjusting the grating period and duty cycle. The three layers consist of two dielectric thin layers and one metallic / dielectric grating layer. The grating layer composes of subwavelength period and thickness rectangular stripes, which lies between a transition layer and a protecting layer. Line-width and attenuation peak properties of the resonance filters are calculated and investigated by using a full vector implementation of Rigorous Coupled Wave Analysis (RCWA) algorithm. It is shown that the grating period can significantly change the filter peak wavelength, and the grating duty cycle heavily changes the filter line-width. The filter attenuation peak has a red shift with 23.3nm as the grating period increases 18nm. The FWHM (Full Width at Half Maximum) of the filter reduces from 1.9nm to 0.28nm as the duty cycle changes from 0.55 to 0.3, which compressed more than six times. Moreover, thickness of each composite nanostructure layer can also affect the narrowband width and peak wavelength of the filter. The results provide guidance in designing, optimizing and fabricating such an active narrowband filter with highly integrated photonic devices.