Abstract
Spicer's absorption diffusion model is extended to analyze Schottky photodiodes which possess special characteristics. The model describes the generation of minority carriers by optical absorption in the bulk of a semiconductor material. The magnitude and shape of the spectral response for a minimally depleted device is found to depend on the rate of variation of the absorption coefficient with wavelength on the thickness of the absorbing region T and on the minority carrier's diffusion length l. Narrow spectral response can exist in this device only in the wavelength region wherein the absorption coefficient alpha is rapidly changing. A combination of high quantum efficiency with sharp tuning is found to exist.
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