Abstract
A highly reliable, narrow spectral linewidth, 150 mW high-power semiconductor laser that oscillates at a wavelength of 860 nm has been developed, by optimising the structure with a 0.7 mu m thick p-cladding layer, a 900 mu m long cavity length, and current-blocking regions near the facets. Stable, fundamental transverse mode operation was obtained up to 230 mW. The spectral linewidth was 5 MHz at 150 mW. stable operation under 150 mW at 50 degrees C was confirmed for more than 2000 h.
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