Abstract
GaAs/AlGaAs single quantum wells have been grown by gas source molecular beam epitaxy (GSMBE). Photoluminescence (PL) linewidth of the electron to heavy hole excitonic transition is optimized as a function of substrate growth temperature. Transitions corresponding to monolayer changes in well width and impurity bound excitons are examined by deliberately growing quantum wells with additional monolayer-off wells, and by modulation doping the barriers. Growth interruption at the inverted interface was found to enhance impurity bound transitions. The narrowest 2 K photoluminescence linewidths are reported for wells in the range of 50–100 Å grown by GSMBE. The differences in the growth kinetics due to the presence of As 2 and H 2 leading to improved PL linewidth are reported.
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