Abstract
Surface-etched distributed Bragg reflector (SE-DBR) semiconductor lasers show potential for use in a variety of communications and spectroscopy applications requiring compact, single-mode, narrow linewidth, and tunable laser sources. This approach eliminates contamination issues associated with forming gratings by regrowth in Al-containing structures by using a single growth step and etching the grating after the entire epitaxy is grown. This paper reviews progress in the development of SE-DBR lasers using InGaAs-GaAs-AlGaAs and GaAs-AlGaAs separate confinement heterostructure. Fabrication techniques, design optimization studies, and device performance characteristics are overviewed. Applications of SE-DBRs toward multiwavelength arrays, THz generation via optical heterodyning, and alkali spectroscopy are discussed.
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