Abstract
An external-cavity semiconductor laser employing a grazing-incidence grating and 100-μm stripe gain-guided laser diodes is described. The laser oscillates in a single axial and spatial mode at currents below the free-running threshold of the diode. A maximum single-frequency power of 30 mW is obtained. The lasing wavelength is tunable over 300 Å. At higher drive currents, the output contains multiple axial and spatial modes, with a linewidth of 4 GHz. The maximum continuous output power is 230 mW.
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