Abstract
Porous silicon multilayers and microcavities, prepared by the pulsed electrochemical etching method, exhibit a variety of reflectivity and photoluminescence spectra. A comparison of the measured results with those calculated based on the transfer matrix method and quantum-box model reveals that the variation of the spectra can be attributed to the change in wavelength position of the stop-band of distributed Bragg reflectors and the maximum of the broad light emission of porous silicon. Different confined electric field modes appear in three different cases of porous silicon microcavities. Their different characteristics are summarized and considered as criteria to distinguish species of the porous silicon microcavities from their photoluminescence spectra.
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