Abstract
AbstractNarrow‐gap (In,Mn)Sb layers, which offer prospects for infrared spin‐photonics, were grown on GaAs (001) substrates using a Riber Compact 21T MBE system and a Veeco valved cracker cell for Sb. Samples consisting 0.4 μm (In,Mn)Sb/GaAs with different Mn content in the range of 1% were examined in this study in respect of their structural, magnetotransport and magnetization properties. It is found that Mn decreases the lattice constant as well as the degree of relaxation of (In,Mn)Sb films. The hole concentration increases with increasing Mn concentration resulting increased acceptor concentration and decreased resistivity.The magnetoresistance is found to be sensitive to the Mn concentration. The temperature‐dependent resistivity data at lower than 30 K show an increased resistivity with decreasing temperature, suggesting the insulating behavior of the samples. In addition, magnetization measurements reveal distinct hysteresis loops, indicating the ferromagnetic properties. The measured saturation magnetization values of the films are found to be dependent on Mn concentration. The Curie temperature is estimated to be below 50 K. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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