Abstract
A narrow bandgap host material, 4,5-di(9H-carbazol-9-yl)phthalonitrile (2CzPN), was used as a bipolar host material to improve the device performances of yellow phosphorescent organic light-emitting diodes(PHOLEDs). The device performances of the yellow PHOLEDs were optimized at a low doping concentration of 1%. A low turn-on voltage of 3.0V and high quantum efficiency of 19.3% were achieved using the 2CzPN host material and no efficiency roll-off of the device was observed up to 1000cd/m2 compared with 25% of reference device.
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