Abstract
We report on the formation of UV emitting Si nanoclusters (NCs) in Si, using a two stageAu implantation technique. These Si NCs, with an average size of 2 nm, showphotoluminescence at room temperature, over a narrow band of about 100 meV with a peakof emission near 3.3 eV. With emission lifetimes in the range of 1.5–2.5 ns, thetransitions seem to come from excitonic recombinations across a quasi-direct gap.Since the structures are below the surface, there is no adverse effect of oxidationresulting in a shift in emission wavelength. On the other hand, an annealing at500 °C has been found to result in a significant increase in the emission intensity. This is due tolocalized plasmon induced electric field enhancement in Au nano-islands in the vicinity.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
