Abstract
AbstractA refractory wavelength selective thermal emitter is experimentally realized by the excitation of Tamm plasmon polaritons (TPPs) between a titanium nitride (TiN) thin film and a distributed Bragg reflector (DBR). The absorptance reaches nearly unity at ≈3.73 μm with the bandwidth of 0.36 μm in the experiment. High temperature stabilities are confirmed up to 500 and 1000 °C in ambient and in vacuum, respectively. When the TiN TPP structure is compared to the TiN–insulator–TiN (TiN‐metal–insulator–metal (MIM)) structure, the former shows higher Q‐factor, which indicates the advantage of choosing the TiN TTP structure against the MIM structure. The proposed refractory TiN TPP structure is lithography‐free and scalable, which paves a way for large scale thermal emitters in practical usage.
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