Abstract
Infrared emission has been observed during the ON-state of amorphous chalcogenide As 50Te 50 threshold switching devices. The emission is a line emission of wavelength corresponding to half the band gap of the OFF-state. The intensity of radiation is virtually independent of device area; the radiation output is temperature independent and exhibits thresholds in both its current and thickness dependence; the radiation power increases with the excess device power above the threshold power. The emission has been studied with both metal and semiconductor contacts to the amorphous layer. An analysis of the data indicates that simple spontaneous emission is not present but that stimulated emission could be occurring.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
