Abstract
Recent results on the properties of narrow gap group III-nitrides and their alloys are reviewed. It is shown that InN with the energy gap of 0.7 eV exhibits classical characteristics of a narrow gap semiconductor with strongly nonparabolic conduction band and an energy dependent electron effective mass. With the new discovery, the direct band gaps of the group III-nitride alloys span an extremely wide energy range from near infrared in InN to deep ultraviolet in AlN offering possibilities for new device applications of these materials. We also discuss properties of dilute group III-N–V alloys in which incorporation of a small amount of nitrogen results in a dramatic band gap reduction. All the unusual properties of the alloys are well described by a band anticrossing model that considers an interaction between localized nitrogen states and the extended states of the conduction band.
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