Abstract
This paper shows the effect of the dimensions of nanowires on threshold voltage, ON/OFF current ratio, and sub-threshold slope. These parameters are critical factors of the characteristics of silicon nanowire transistors. The MuGFET simulation tool was used to investigate the characteristics of a transistor. Current-voltage characteristics with different dimensions were simulated. Results show that long nanowires with low diameter and oxide thickness tend to have the best transistor characteristics.
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