Abstract
Spherically shaped voids, of nanometer size, are observed in molecular-beam epitaxially grown SiGe alloy layers implanted in-situ at elevated temperature with low-energy Ge ions, followed by thermal treatments. The voids are exclusively assembled in the narrow, implanted band. The voids only appear in the layers after a heat treatment at a temperature higher than 700 \ifmmode^\circ\else\textdegree\fi{}C, and they are stable up to 900 \ifmmode^\circ\else\textdegree\fi{}C. Arsenic ion implantation at similar conditions does not give rise to void formation but to regular interstitial dislocation loops. The nucleation stage of the voids is accompanied by a strong photoluminescence-yield enhancement in the range of 1.4--1.55 \ensuremath{\mu}m, originating from the strained SiGe alloy layer which contain vacancy clusters or small voids.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
