Abstract
Nanoscratching-induced deformation in monocrystaline silicon is found to depend on the loading conditions. Molecular dynamics simulations reveal that amorphous phase transformation and nanotwins are the two major mechanisms. At a relatively low scratching depth, amorphous transformation occurs on the surface; however, when the scratching depth is greater than 1 nm, nanotwinning also emerges in the subsurface along 〈1 1 0〉 direction and its formation is associated with the body-centred-tetragonal-5 Si phase transformation. The twinning deformation stops at a Shockley partial dislocation.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
