Nanostructures and luminescence properties of porous ZnO thin films prepared by sol–gel process

Abstract

ZnO thin films containing nano-sized pores were synthesized on solid substrates through a sol–gel process by accommodating cetyl-trimethyl-ammonium bromide (CTAB) as an organic template in the precursor solution. By X-ray diffraction the resultant ZnO films were found to possess ordered pore arrays forming lamellar structure with the spacing between two adjacent pores being ∼3.0 nm. Photoluminescence measurements indicated that the surfactants effectively passivated the surface defects of the ZnO films responsible for the green emission. Al doping was found to improve not only the lamellar structure of the pore arrays but also the near-band-gap emission intensity while the suppression effect of CTAB on the green emission remained undisturbed. With a proper control of doping level, the optical property as well as the structural integrity can be tailored to augment the potential of ZnO films for the optoelectronics and sensor applications.