Nanostructured Ti1-xCux thin films with tailored electrical and morphological anisotropy

Abstract

Inclined, zigzag and spiral Ti1-xCux films were co-sputtered by the Glancing Angle Deposition technique. Two distinct titanium (Ti) and copper (Cu) targets were used and the films were grown with a particle flow incidence angle α of 80°. The thin films had Cu contents ranging from 36 to 76 ± 5 at. %. The effect of increasing Cu incorporation on the electrical anisotropy, as well as the effect of columnar architecture variations on the morphological, structural and electrical properties of the films was evaluated and correlated with the particular their architectures.Main results show well-defined and highly inclined columns (with an average column angle β = 45° ± 5°) for all sputtering conditions. Quasi-amorphous thin films were obtained with low Cu contents (36 at. %), while crystalline Cu (111) + Ti3Cu (114) bi-component structures were achieved at high Cu concentrations (76 at. %). No permanent oxidation of the films was detected after a two-cycle RT-200 °C-RT (RT – room temperature) annealing in air. The two-dimensional representation of the resistivity anisotropy of the columnar and 2 zigzags films is shaped as an elongated ellipse along the xx direction, with a variation of the effective anisotropy, Aeff, at 200 °C from 1.4 to 2.9. The samples prepared with 2 spirals and the same Cu content (36 at. %) exhibit an isotropic behavior, with an Aeff value at 200 °C of 1.1. The overall results demonstrate the possibility to tune the thin films' morphology and electrical characteristics in order to obtain a set of properties that are suitable for the development of high performance materials, such as the case of resistance temperature detectors.