Nanostructured layers of anodic aluminum oxide on insulating substrates

Abstract

A method for creation of porous alumina layers on insulating substrates is proposed. The anodic oxidation of thin aluminum films is performed in two stages: formation of a thin dense oxide layer and its local breakdown followed by the final oxidation of the film with a propagation of the oxidation front from a breakdown region to periphery. Aluminum oxide layers exhibit quasi-ordered structure with the pore diameter ranging from 10 to 100 nm and depending on conditions of electrochemical oxidation. The method provides the aluminum film oxidation right to the insulating substrate (i.e., the absence of residual metal phase inclusions on the interface) and can be used for the creation of matrix and composite structures for semiconductor microelectronics.