Nanostructured indium tin oxide for application in optoelectronic devices

Abstract

ABSTRACTThe electrical resistivities of nanostructured films of indium tin oxide were measured. The films were prepared using glancing angle deposition, a physical vapour deposition technique. This technique was used to prepare nanostructured indium tin oxide thin films of various morphologies. Films consisting of vertical posts were electrically characterized using a probing station. Compared to a normally evaporated planar film, the nanostructured films were found to exhibit resistivities approximately two orders of magnitude greater. Development of the measurement technique is ongoing, and several ideas for improvement are described.