Abstract
Nanostructured GdxZn1−xO thin films with different Gd concentration from 0% to 10% deposited at 400°C using the NSP technique. The films were characterized by structural, surface and optical properties, respectively. X-ray diffraction analysis shows that the Gd doped ZnO films have lattice parameters a=3.2497Å and c=5.2018Å with hexagonal structure and preferential orientation along (002) plane. The estimated values compare well with the standard values. When film thickness increases from 222 to 240nm a high visible region transmittance (>70%) is observed. The optical band gap energy, optical constants (n and k), complex dielectric constants (εr and εi) and optical conductivities (σr and σi) were calculated from optical transmittance data. The optical band gap energy is 3.2eV for pure ZnO film and 3.6eV for Gd0.1Zn0.9O film. The PL studies confirm the presence of a strong UV emission peak at 399nm. Besides, the UV emission of ZnO films decreases with the increase of Gd doping concentration correspondingly the ultra-violet emission is replaced by blue and green emissions.
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