Abstract
Nanostructure CZTS thin film was fabricated by electrodeposition technique. To manufacture the heterojunctions, p-type c-Si wafers of (100) orientation were used as a substrate. Before anodization, the surface of the c-Si substrates were etched in an aqueous solution of HF and further washed in distilled water (at temperature of 80°С and ethyl alcohol and then dried in air. The current-voltage characteristics of the CZTS /PS solar cell under dark conditions show that forward bias current variation approximately exponentially with voltage bias. The capacitance for Nano- CZTS /PS Solar Cell decreases with the increase of the reverse bias voltage and with the increasing of etching time of nPS layers. That heterojunctions demonstrate good photo-response in the wavelength range of 510 - 650 nm.
Highlights
Compound semiconductors such as Cu2ZnSnS4 are important because of their photovoltaic, photoelectrochemical, and electroluminescent applications and, they have much attention
The surface of the c-Si substrates were etched in an aqueous solution of HF and further washed in distilled water and ethyl alcohol and dried in air
scanning electrode microscopy (SEM) data indicate that the increase of anodization current density leads to the increase of the resulting pore size and a significant surface flattening between the pores
Summary
Compound semiconductors such as Cu2ZnSnS4 are important because of their photovoltaic, photoelectrochemical, and electroluminescent applications and, they have much attention. The precise control of porosity and thickness allows the tailoring of optical properties of porous silicon and has opened the door to a multitude of applications in optoelectronics technology [10,11,12] Such structures consist of silicon particles in several nanometer size separated by voids. Porous silicon structures have good mechanical robustness, chemical stability and compatibility with existing silicon technology have a wide area of potential applications such as waveguides, In section two, the synthesis and characterization of electrochemically anodized nanocrystalline porous silicon layers are done, the setup was used in fabrication as a device of Nano-CdS/PS heterojunction solar cell, and investigating the electrical properties of the heterojunction [13]. At the same time, such studies are urgent, since the features of the current-f low mechanisms control the main characteristics of semiconductor devices to a large extent
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