Abstract
The experimental evidence of the effect of femtosecond laser pulses on the spectral response of a Silicon photovoltaic cell is demonstrated and investigated. The response of this device is covering the visible to near infrared spectral region. The responsivity of the photovoltaic cell is enhanced from 0.18A/W (0.5A/W to 0.85 A/W) to 0.25A/W, this means that the conversion efficiency increases from about 9% to about 14% due to irradiation effect. All treatments and measurements have been done at room temperature. The observed enhancement is related to the appearing of nano-structured groves in the 700-900 nm range. Keywords: Silicon photovoltaic cell, nanostructure, femtosecond laser pulse, irradiation, infrared
Highlights
The physical processes responsible for the periodicSilicon is the most commonly used semiconductor in structure formation in femtosecond laser ablation of thin optoelectronic devices and Silicon photodiodes are films surfaces have been reported (Miyaji & Miyazaki, extensively used in industrial applications as reliable 2008)
The description of high accuracy interpolation of the experimental procedure to enhance the efficiency of a quantum yield of silicon photodiodes in the bare silicon photovoltaic cell from 9% to 14% is reported
Near UV was reported by Kübarsepp et al (2000). They compared the results of the quantum yield Experimental procedure calculations and measurements obtained using of Silicon The experimental procedure is done by two steps, the trap detector
Summary
The physical processes responsible for the periodicSilicon is the most commonly used semiconductor in structure formation in femtosecond laser ablation of thin optoelectronic devices and Silicon photodiodes are films surfaces have been reported (Miyaji & Miyazaki, extensively used in industrial applications as reliable 2008). On the irradiated photovoltaic surface is observed and the The description of high accuracy interpolation of the experimental procedure to enhance the efficiency of a quantum yield of silicon photodiodes (detectors) in the bare silicon photovoltaic cell from 9% to 14% is reported. They compared the results of the quantum yield Experimental procedure calculations and measurements obtained using of Silicon The experimental procedure is done by two steps, the trap detector.
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