Nanostructure Formation during Amorphous Carbon Films Deposition

Abstract

In uence of Cu particles for the carbon nanostructures formation during a-C:H lms deposition by plasma enhanced chemical vapor deposition method from pure acetylene gas plasma were analyzed in this work. Silicon wafer and Cu target were simultaneously bombarded by Ar ions for the Cu particles deposition on the silicon before a-C:H lms formation. It was obtained that hydrogenated silicon carbide forms on this defected Si/Cu surface during the rst stage of carbon lm deposition. Structure of a:C-H lms and conditions of nanostructures formation depended on substrate temperature and Cu concentration in the lm, then deposition time was 300 s.