Abstract
In uence of Cu particles for the carbon nanostructures formation during a-C:H lms deposition by plasma enhanced chemical vapor deposition method from pure acetylene gas plasma were analyzed in this work. Silicon wafer and Cu target were simultaneously bombarded by Ar ions for the Cu particles deposition on the silicon before a-C:H lms formation. It was obtained that hydrogenated silicon carbide forms on this defected Si/Cu surface during the rst stage of carbon lm deposition. Structure of a:C-H lms and conditions of nanostructures formation depended on substrate temperature and Cu concentration in the lm, then deposition time was 300 s.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have