Nanostructure formation by high temperature–pressure treatment of silicon implanted with hydrogen/helium

Abstract

The effect of high temperature (HT, up to 1400 K)–hydrostatic pressure (HP, up to 1.2 GPa) on Czochralski silicon implanted with hydrogen (Si:H, H dose, D H = 5 × 1 0 16 cm − 2 ), helium (Si:He, D He = 5 × 1 0 16 cm − 2 ) or helium + hydrogen (Si:He, H, total D H + He = 1 × 1 0 17 cm − 2 ) has been investigated by TEM, SIMS and PL measurements. The treatment of Si:H, Si:He and Si:He, H at ≤1070 K–HP results in a formation of buried nanostructured layers composed of hydrogen/helium filled cavities/platelets and numerous point and extended defects; much fewer dislocations are created at ≥1270 K–HP. The microstructure of Si:He, H evidences specific interaction of implanted helium and hydrogen, affecting the creation of Si–H bonds.