Abstract
In this paper, p-type hydrogenated nanocrystalline (nc-Si:H) films were prepared on corning 7059 glass by plasma-enhanced chemical vapor deposition (PECVD) system. The films were deposited with radio frequency (RF) (13.56 MHz) power and direct current (DC) biases stimulation conditions. Borane (B 2H 6) was a doping agent, and the flow ratio η of B 2H 6 component to silane (SiH 4) was varied in the experimental. Films’ surface morphology was investigated with atomic force microscopy (AFM); Raman spectroscopy, X-ray diffraction (XRD) was performed to study the crystalline volume fraction X c and crystalline size d in films. The electrical and optical properties were gained by Keithly 617 programmable electrometer and ultraviolet–visible (UV–vis) transmission spectra, respectively. It was found that: there are on the film surface many faulty grains, which formed spike-like clusters; increasing the flow ratio η, crystalline volume fraction X c decreased from 40.4% to 32.0% and crystalline size d decreased from 4.7 to 2.7 nm; the optical band gap E g opt increased from 2.16 to 2.4 eV. The electrical properties of p-type nc-Si:H films are affected by annealing treatment and the reaction pressure.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
