Nanospike Electrode Designs for Improved Electrical Performance in Nanoscale Organic Thin-Film Transistors

Abstract

This work presents a design approach for substantial improvement of the electrical performance in short-channel organic thin-film transistors (TFTs). The design combines features that can improve charge injection to significantly reduce the contact resistance which limits performance of short-channel organic TFTs. Additionally, this design is very effective at mitigating short-channel effects that can be dominant in nanoscale TFTs. TFTs were fabricated by using the semiconductors dinaphtho[2,3-b:2′,3′-f]thieno[3,2-b]thiophene (DNTT) and pentacene with channel lengths in the ranges 200–800 nm and 10–100 nm, respectively. The total source-to-drain resistance is reduced to about 50 ohm·cm, which is among the lowest values reported for organic TFTs.