Abstract
Development of MoO 3 as a novel material for gas sensing was addressed. Thin films were produced by reactive rf sputtering assisted by annealing. Doping with Ti was performed to enhance the conductance of the MoO 3 film. It came out that the layers were two orders of magnitude more conductive than undoped material. Good and reversible response to CO was achieved at 300°C, which fell off at higher temperatures. An interesting feature of the films was a considerably fast response for both CO and NO 2 despite low operating temperature. Doped films were found to operate at best about 100°C below than for pure MoO 3 layers.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
