Abstract
Uniform gold films with a thickness of several tens of nanometers were obtained for the first time on silicon and quartz substrates by ion-beam deposition-sputtering. It is shown that the predominant lateral growth of nanoscale metal layers along the substrate surface occurs under exposure to the high-energy component of the sputtered atoms flux. The decisive role in the nanometer gold film formation is played by elastic collisions of sputtered metal atoms with atoms of the substrate and growing film. The application of the multiple deposition-sputtering operation allows suppressing the grain formation process and obtaining gold films with better characteristics than those with a single deposition. Keywords: ion-beam sputtering-deposition, nanosized gold film, electric resistance, surface roughness, autoirradiation
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