Abstract

An etching technique called phase-change etching was developed. In this technique, only crystalline regions in a phase-change recording film are selectively etched by an alkaline solution, and amorphous regions remain on the sample surface, which means that a phase-change recording film can be used as a resist for pattern formation. By combination of this technique and phase-change recording, fabrication of the dot pattern with a size of about 1∕10 of the fabricating spot was demonstrated. This result indicates the possibility of nanosize fabrication using the phase-change etching technique.

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